1 گروه پژوهشی فوتونیک، مرکز تحقیقات مهندسی، دانشگاه یزد
2 گروه اتمی مولکولی، دانشکده فیزیک، دانشگاه یزد
عنوان مقاله [English]
In this work, quantum dots of different materials were used to fabricate the sensitized solar cells. The successive ionic layer adsorption and reaction SILAR method was used to synthesise CdS and PbS QD´s. By changing the percentages of the material or changes in the number of layers the performance of individual cells was compared. Moreover, solar cells by combination of these cells so-called co-sensitized solar cells were fabricated and characterized. The use of narrow band gap semiconductors such as PbS may expand the light absorption range to the near-infrared region in quantum-dot-sensitized solar cells QDSCs, increasing the generated photocurrent. However, the use of PbS as a sensitizer in QDSCs causes some problems of stability and high recombination. Here, it is shown that the direct growth of a CdS layer on previously deposited PbS minimizes these problems. An increase in short-circuit current density up to 8.24 mA/cm2and the higher efficiency of 1.25 for the hybrid PbS/CdS QDSCs were obtained, compared to that of PbS QDSCs, using polysulfide electrolyte in both cells.