نانومقیاس

نانومقیاس

شبیه‌سازی آشکارساز نوری بر مبنای نانوروبان زیگزاگ سیلیسن با الکترودهای نامتقارن

نوع مقاله : مقاله پژوهشی

نویسندگان
گروه حالت جامد، دانشکده فیزیک، دانشگاه یزد، یزد، استان یزد، ایران
چکیده
در این پژوهش، با استفاده از نظریه‌ی تابع گرین غیر تعادلی جفت شده با تقریب بستگی قوی، و در نظر گرفتن نزدیک‌ترین همسایه‌ها، عملکرد آشکارساز نوری بر مبنای نانوروبان زیگزاگ سیلیسن با الکترودهای آلاییده‌ی نامتقارن شبیه‌سازی شد. مشخصه‌های الکترونی، از جمله ساختار نواری و چگالی حالت‌های کانال، و خواص ترابردی افزاره نظیر جریان نوری بر حسب انرژی فوتون تابشی و بدون بایاس خارجی و هم‌چنین جریان تاریک بر حسب ولتاژ اعمالی به درین به دست آمدند. برای ارزیابی نظری عملکرد این افزاره از نور تک‌رنگ در محدوده‌ی ۱۲۴ تا ۱۲۴۰ نانومتر استفاده شده است. بیشترین جریان نوری در این افزاره ناشی از تابشی با طول موج 438 نانومتر بوده که منتج به بازدهی کوانتومی24% ، پاسخ‌دهی نوری 44/8 و قدرت آشکارسازی۱۰۹×۳/۵ جونز شده است. تغییرات جریان کل عبوری از افزاره برحسب ولتاژ اعمالی به درین در شرایط تاریک و تحت تابش نور تک‌رنگ 438 نانومتر و شدت‌‌های مختلف ارزیابی شد. مشخص شد که در ولتاژ معین و با افزایش شدت نور، جریان کل کاهش می‌ یابد که متناظر با کاهش جریان اتصال کوتاه در سلول‌های خورشیدی سیلیکونی است.
کلیدواژه‌ها

عنوان مقاله English

Simulation of a photodetector based on zigzag edge Silicene nanoribbons with asymmetric electrodes

نویسندگان English

Fatemeh Alaee
Mohammad Ali Sadeghzadeh
Fatemeh Ostovari
PhD student, Department of physics/Yazd University/Yazd/Iran
چکیده English

: In this research, a Zigzag edge Silicene Nanoribbons (ZSiNR) photodetector having asymmetric doped source and drain electrodes has been simulated using the tight-binding approximation and taking account first nearest neighbors, coupling to Non-Equilibrium Green Function approach. The electronic characteristics including band energy structure and density of states of the Chanel and transport traits of the device such as photocurrent in terms of incident photon energy in the absent of external bias, moreover the dark current versus applied voltage to the drain have been determined. For theoretical assessment of device performance, monochromatic illumination in the range of has been used. The maximum photocurrent of this device is related to 438 nm illumination which resulted the quantum efficiency of 24%, photoresponsivity of 8.44 A/mW, and detectivity as much as ∼109 Jones. Variations of device total current versus drain voltage in dark and of monochromatic 438 nm illumination with different intensities has been assessed. It is revealed that, in constant applied voltage, as the illumination intensity increases the total device current reduces which is correspond to reduction of short circuit current of silicon solar cells.

کلیدواژه‌ها English

"Silicene Nanoribbons"
"Photodetector"
"Photocurrent"
"Photo-responsivity"
" Quantum Efficiency"
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  • تاریخ دریافت 28 مرداد 1401
  • تاریخ بازنگری 10 آبان 1401
  • تاریخ پذیرش 27 آبان 1401