نوع مقاله : مقاله پژوهشی
نویسندگان
گروه حالت جامد، دانشکده فیزیک، دانشگاه یزد، یزد، استان یزد، ایران
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسندگان [English]
: In this research, a Zigzag edge Silicene Nanoribbons (ZSiNR) photodetector having asymmetric doped source and drain electrodes has been simulated using the tight-binding approximation and taking account first nearest neighbors, coupling to Non-Equilibrium Green Function approach. The electronic characteristics including band energy structure and density of states of the Chanel and transport traits of the device such as photocurrent in terms of incident photon energy in the absent of external bias, moreover the dark current versus applied voltage to the drain have been determined. For theoretical assessment of device performance, monochromatic illumination in the range of has been used. The maximum photocurrent of this device is related to 438 nm illumination which resulted the quantum efficiency of 24%, photoresponsivity of 8.44 A/mW, and detectivity as much as ∼109 Jones. Variations of device total current versus drain voltage in dark and of monochromatic 438 nm illumination with different intensities has been assessed. It is revealed that, in constant applied voltage, as the illumination intensity increases the total device current reduces which is correspond to reduction of short circuit current of silicon solar cells.
کلیدواژهها [English]