آزمایشگاه نانوفوتونیک، دانشکده فیزیک، دانشگاه خوارزمی، تهران
عنوان مقاله [English]
In this study, we achieved to high carrier concentration (in order ۱۰۱۹) p-type ZnO by using N-Al co-doping. By controlling the surfactant concentration, the temperature of annealing reduced to ٤٥۰˚C without deterioration of electrical properties. To investigate the effect of doping, the optical and electrical properties of co-doped zno characteristics were compared with undoped ZnO thin film fabricated by the same method. The PL-spectra results indicate most intrinsic defects that mainly generate electron carriers, were removed by co-doping. The UV-visible spectra show both films have high transmittance in visible region (over ۹٥٪), visible transmission increased by N-Al co-doping. The electrical analysis results, confirm the conversion from n-type to p-type ZnO, Which is in agreement with the optical results of photoluminescence spectra.