خواص نشر فوتولومینسانس لایه های نازک نانوساختار Co:CdZnS تهیه شده به روش انباشت حمام شیمیایی

نویسندگان

1 گروه شیمی، دانشکده علوم، دانشگاه ایالم، شهر ایالم

2 گروه فیزیک، دانشکده علوم، دانشگاه ایلام، شهر ایلام

3 گروه شیمی، دانشکده علوم، دانشگاه ایلام، شهر ایلام

چکیده

در این پژوهش تلاش گردید تا با بهینه سازی برخی از فاکتورهای آزمایشگاهی، لایه‌های نازکی از نانوبلورهای نیم‌رسانای کادمیم روی سولفید آلاییده شده با کبالت با تک قله گسیل مربوط به ترازهای انرژی آلاییدگی، به روش انباشت حمام شیمیایی تهیه گردند. نتایج نشان دادند که قله گسیل شدید در حدود 530 نانومتر را می‌توان به بازترکیب حاملین بار از طریق ترازهای کبالت در گاف انرژی نسبت داد. همچنین، الگوهای پراش پرتوی ایکس لایه‌های نازک Co:CdZnS نشان دادند که با افزایش دمای لایه نشانی، اندازه‌ی نانوبلورهای تشکیل‌دهنده لایه‌ها بزرگتر می‌شود. کیفیت مناسب خواص سطح لایه‌های تهیه شده در دماهای لایه نشانی مختلف، با استفاده از تصویربرداریِ میکروسکوپ الکترون روبشیِ- گسیل میدانی اثبات گردید. خواص نشری این لایه-ها نشان می‌دهند که این لایه‌ها پتانسیل بسیار مناسبی برای کاربرد در دستگاه‌های اپتوالکترونیکی نانو مقیاس دارند.

کلیدواژه‌ها


عنوان مقاله [English]

PhotoluminescenceEmissionProperties of Nanostructured Co:CdZnSThin Films Prepared by ChemicalBath DepositionMethod

نویسندگان [English]

  • R. Sahraei 1
  • E. Soheyli 2
  • Z. Sharifirad 3
1 Department of Chemistry, Faculty of Science, Ilam University, Ilam
2 Department of Physics, Faculty of Science, Ilam University, Ilam
3 Department of Chemistry, Faculty of Science, Ilam University, Ilam
چکیده [English]

In this study, it was tried to prepare nanostructured thin films of Co-doped CdZnS Co:CdZnS with relative single dopant-related emission peak, through optimization of several experimental parameters, and using chemical bath deposition technique. Results demonstrated that the intense emission peak around 530 nm can be attributed to the recombination of charge carriers through mid-gap localized energy levels of cobalt ions. The X-ray diffraction patterns of Co:CdZnS thin films, also revealed that increasing deposition temperature leads to an increase in the size of nanocrystals. The suitable quality of surface characteristics of the layer at each deposition temperature was demonstrated by field emission-scanning electron microscopy. The emission characteristics of these layers show their suitable applicable potentials as light-emitting structures in nanoscale optoelectronic devices.

کلیدواژه‌ها [English]

  • Nanostructured thin films
  • Cadmium zinc sulfide
  • Cobalt doping
  • Chemical bath deposition
  • Photoluminescence
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