Abstract: The excellent transport and optical properties of graphene have attracted much attention for possible application of this material in nanoscale electronics and optoelectronics. Electrostatics modulation of the graphene channel through the gates results in promising two-dimensional field effect for analogue and radiofrequency applications. These devices ideally act in the limits of saturation and their current is saturated by increasing the source-drain field. While elastic scattering determines low field mobility, the saturation velocity is related to inelastic scattering by surface polar phonon of polar substrates or intrinsic graphene optical phonons. In this study, using the Boltzmann equation and with viewpoint acoustic phonon and surface optical phonon, the effects of Coulomb impurity and surface polar phonon scattering, have been investigated. Also, the mobility of electrons calculated and plotted in terms of temperature and their density respectively, for the substrates HfO2, Al2O3 and ZrO2. The obtained results are in agreement with recent experimental and theoretical data.