Nanophotonics Laboratory, Physics Department, Kharazmi University
Abstract
In this study, we achieved to high carrier concentration (in order ۱۰۱۹) p-type ZnO by using N-Al co-doping. By controlling the surfactant concentration, the temperature of annealing reduced to ٤٥۰˚C without deterioration of electrical properties. To investigate the effect of doping, the optical and electrical properties of co-doped zno characteristics were compared with undoped ZnO thin film fabricated by the same method. The PL-spectra results indicate most intrinsic defects that mainly generate electron carriers, were removed by co-doping. The UV-visible spectra show both films have high transmittance in visible region (over ۹٥٪), visible transmission increased by N-Al co-doping. The electrical analysis results, confirm the conversion from n-type to p-type ZnO, Which is in agreement with the optical results of photoluminescence spectra.
Bagheri,N. and H. Majles Ara,M. (2015). Optical & Electrical Investigation of
N-Al Co-doped Zinc Oxide Fabricated
by Controlled Sol-Gel Method. (e46709). Nanomeghyas, 2(2), e46709
MLA
Bagheri,N. , and H. Majles Ara,M. . "Optical & Electrical Investigation of
N-Al Co-doped Zinc Oxide Fabricated
by Controlled Sol-Gel Method" .e46709 , Nanomeghyas, 2, 2, 2015, e46709.
HARVARD
Bagheri N., H. Majles Ara M. (2015). 'Optical & Electrical Investigation of
N-Al Co-doped Zinc Oxide Fabricated
by Controlled Sol-Gel Method', Nanomeghyas, 2(2), e46709.
CHICAGO
N. Bagheri and M. H. Majles Ara, "Optical & Electrical Investigation of
N-Al Co-doped Zinc Oxide Fabricated
by Controlled Sol-Gel Method," Nanomeghyas, 2 2 (2015): e46709,
VANCOUVER
Bagheri N., H. Majles Ara M. Optical & Electrical Investigation of
N-Al Co-doped Zinc Oxide Fabricated
by Controlled Sol-Gel Method. Nanomeghyas, 2015; 2(2): e46709.
