Nanophotonics Laboratory, Physics Department, Kharazmi University
Abstract
In this study, we achieved to high carrier concentration (in order ۱۰۱۹) p-type ZnO by using N-Al co-doping. By controlling the surfactant concentration, the temperature of annealing reduced to ٤٥۰˚C without deterioration of electrical properties. To investigate the effect of doping, the optical and electrical properties of co-doped zno characteristics were compared with undoped ZnO thin film fabricated by the same method. The PL-spectra results indicate most intrinsic defects that mainly generate electron carriers, were removed by co-doping. The UV-visible spectra show both films have high transmittance in visible region (over ۹٥٪), visible transmission increased by N-Al co-doping. The electrical analysis results, confirm the conversion from n-type to p-type ZnO, Which is in agreement with the optical results of photoluminescence spectra.
Bagheri, N., & H. Majles Ara, M. (2015). Optical & Electrical Investigation of
N-Al Co-doped Zinc Oxide Fabricated
by Controlled Sol-Gel Method. Nanoscale, 2(2), -.
MLA
N. Bagheri; M. H. Majles Ara. "Optical & Electrical Investigation of
N-Al Co-doped Zinc Oxide Fabricated
by Controlled Sol-Gel Method". Nanoscale, 2, 2, 2015, -.
HARVARD
Bagheri, N., H. Majles Ara, M. (2015). 'Optical & Electrical Investigation of
N-Al Co-doped Zinc Oxide Fabricated
by Controlled Sol-Gel Method', Nanoscale, 2(2), pp. -.
VANCOUVER
Bagheri, N., H. Majles Ara, M. Optical & Electrical Investigation of
N-Al Co-doped Zinc Oxide Fabricated
by Controlled Sol-Gel Method. Nanoscale, 2015; 2(2): -.
