فهرست

فرآیند تکثیر چند اکسیتون در نانوساختارهای مرکب سیلیکان-ژرمانیوم

نشریه: سال پنجم-شماره ۲-تابستان ۱۳۹۷ - مقاله 7   صفحات :  53 تا 61



کد مقاله:
nm-564

مولفین:
مهدی گردی ارمکی: دانشگاه تربیت مدرس - مهندسی برق
محمدکاظم مروج فرشی: دانشگاه تربیت مدرس - مهندسی برق


چکیده مقاله:

در فرآیند تکثیر چند اکسیتون، جذب یک فوتون در شرایط معین می‌تواند به تولید بیش از یک اکسیتون منجر شود و در نتیجه بازده افزاره‌ی جاذب نور را افزایش دهد. در این نوشتار با استفاده از روشی بس ذره ای، نتایج حاصل از شبیه‌سازی فرآیند تکثیر چند اکسیتون در نانوساختارهای مرکب سیلیکان-ژرمانیوم ارائه می‌شود. نتایج شبیه‌سازی‌ها نشان می‌دهند افزایش تعداد اتم‌های سیلیکان در نانوساختار باعث افزایش آستانه‌ی تکثیرِ بیش از یک اکسیتون و نیز افزایش بیشنه‌ی جذب نوری می‌شود.


Article's English abstract:

In multiple exciton generation, absorption of a photon in a given condition can lead to the production of more than one exciton, increasing the efficiency of the light harvesting devices. Using a many-body method, the results of the multiple exciton generation in silicon-germanium composite nanostructures are presented. The simulation results show that the more the number of silicon atoms in the nanostructure, the larger the MEG threshold and the stronger optical absorption.


کلید واژگان:
تکثیر چند اکسیتون، احتمال کوانتومی MEG، نانوساختارهای ترکیبی سیلیکن-ژرمانیوم

English Keywords:
Multiple Exciton generation, MEG quantum probability. Silicon-Germanium Composite Nanostructures

منابع:
[1] م، گردی ارمکی ، «شبیه‌سازی عددی فرآیند تکثیر چند اکسیتون در نانوساختارهای صفربُعدی،» رساله دکتری مهندسی برق، دانشگاه تربیت مدرس، 1396.

English References:
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