فهرست

مقایسه خواص اپتوالکترونیکی لایه های نانوساختارSnO2 ، In2O3 و ITO جهت حسگری اتانول

نشریه: زمستان ۱۳۹۶ - مقاله 4   صفحات :  321 تا 330



کد مقاله:
nm-334

مولفین:
نسرین جمال پور: دانشگاه شهرکرد - گروه فیزیک
محسن قاسمی ورنامخواستی: دانشگاه شهرکرد - گروه فیزیک
ویشتاسب سلیمانیان: دانشگاه شهرکرد - گروه فیزیک


چکیده مقاله:

چکیده در این مقاله لایه¬های نازکIn2O3 ، SnO2 و ITO SnO2 10 In2O3 90 با استفاده از روش تبخیر حرارتی روی زیر لایه¬های شیشه انباشت شدند. ضخامت¬ و آهنگ انباشت برای همه نمونه¬ها به ترتیب nm 220 و nm/s 1/0 انتخاب شد. خواص اپتیکی لایه¬ها در دمای بازپخت ℃300 مورد بررسی قرار گرفت. در این مطالعه همه نمونه¬های¬ بازپخت شده عبور بالایی در طیف نور مرئی از خود نشان دادند. بیش¬ترین عبور 91 را لایه¬ بازپختی SnO2 نشان داد. ضرایب شکست نمونه¬های مختلف در طول موج 550 نانومتر در محدوده 88/1 تا 92/1 به دست آمد. هم¬چنین با افزودن ناخالصی SnO2 به In2O3 خواص فیزیکی این لایه¬ها مورد بررسی قرار گرفت. نتایج طیف پراش ایکس نشان می¬دهد لایه¬های In2O3 و ITO دارای ساختار بس بلورین بوده و در ساختار مکعبی متبلور می¬شوند. در نهایت به منظور مقایسه حساسیت لایه¬های SnO2، In2O3 و ITO نسبت به آشکارسازی بخار اتانول، به عنوان یکی از کاربرد مواد نیم¬رسانای شفاف پرداخته شده است. نتایج حساسیت بالای SnO2 در مقایسه با In2O3 و ITO را برای آشکارسازی بخار اتانول نشان می¬دهد.


Article's English abstract:

Abstract In this research, In2O3, SnO2 and 10 SnO2 90 In2O3 ITO thin films were deposited on glass substrates using thermal evaporation technique. The thickness and deposition rate for all the samples are 220 nm and 0.1 nm/s, respectively. The optical properties of the layers were investigated at annealing temperature of 300 ℃. In this study, all annealed samples indicate high transmittance in the visible wavelength region. The highest transmission for the annealed layers is 91 which is related to the SnO2. Refractive indexes of different samples n at a wavelength of 550 nm are in the range of 1.88-1.92. Also, the effect of adding SnO2 as impurity to In2O3 on physical properties of these films were investigated. X-ray diffraction results show that In2O3 and In2O3 doped with tin layer have a polycrystalline structure and are crystallized in the cubic structure. Finally, the influence of nanoparticles of SnO2, In2O3 and ITO for sensing ethanol vapor as an application of transparent semiconductor oxides is discussed. The results show a high sensitivity of SnO2 films compared to the In2O3 and ITO films for detecting ethanol vapor.


کلید واژگان:
اکسید نیم رسانای شفاف، لایه های نانو ساختار، خواص اپتیکی، حسگر گاز

English Keywords:
Transparent semiconductor oxide, Nanostructured films, Optical properties, Gas sensor

منابع:

English References:
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