فهرست

بررسی نظری عملکرد نانوساختارSnS2 بعنوان لایه بافر در سلول خورشیدی CuIn1-xGaxSe2 و مقایسه آن با CdS

نشریه: بهار ۱۳۹۷ - مقاله 12   صفحات :  99 تا 104



کد مقاله:
nm-496

مولفین:
مریم حقیقی
مهران مین باشی: دانشگاه علم و صنعت - دانشکده فیزیک
نیما تقوی نیا
سید محمد مهدوی: دانشگاه صنعتی شریف - فیزیک
امیر حسین احمد خان کردبچه: دانشگاه علم و صنعت - دانشکده فیزیک


چکیده مقاله:

در این مقاله، ابتدا سلول خورشیدی CIGSe با نسبت مختلف Ga/Ga In بر اساس داده های تجربی با استفاده از نرم افزار SCAPS مدلسازی شده است. سپس، ترکیب SnS2 بعنوان بافری مناسب جهت حذف ترکیب سمی CdS مطرح شده است. با توجه به نتایج مدلسازی، SnS2 ماده ای بسیار مناسب جهت جایگزینی با ماده سمی CdS می باشد.


Article's English abstract:

In this paper, firstly, the CIGSe solar cell with a different Ga/Ga In ratio was modeled based on experimental data using the SCAPS software. Then, the SnS2 composition was proposed as a suitable buffer for the elimination of toxic CdS compounds. According to the modeling results, SnS2 is a very suitable material for substitution of the toxic CdS.


کلید واژگان:
سلول خورشیدی CIGS(e)، نرم افزار SCAPS، لایه بافر، لایه نانوساختار SnS2، خمش نوار رسانش

English Keywords:
CIGS(e) solar cell, SCAPS software, Buffer layer, SnS2 nanostructure layer, Conduction band offset

منابع:

English References:
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